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FDB14N30 300V N-Channel MOSFET
FDB14N30
300V N-Channel MOSFET Features
* 14A, 300V, RDS(on) = 0.29 @VGS = 10 V * Low gate charge ( typical 18 nC) * Low Crss ( typical 17 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
UniFET
Description
February 2007
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
D
G
D2-PAK
G S
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDB14N30
300 14 8.4 56 30 330 14 14 4.5 140 1.12 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RJA* RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient
Min.
----
Max.
0.89 40 62.5
Unit
C/W C/W C/W
* When mounted on the minimum pad size recommended (PCB Mount)
(c)2007 Fairchild Semiconductor Corporation
1
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FDB14N30 Rev. A
FDB14N30 300V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDB14N30
Device
FDB14N30TM
Package
D2-PAK
TC = 25C unless otherwise noted
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 300V, VGS = 0V VDS = 240V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 7A VDS = 40V, ID = 7A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
300 -----3.0 ------
Typ.
-0.3 -----0.24 10.5 815 150 17 20 105 30 75 18 4.5 8
Max Units
--1 10 100 -100 5.0 0.29 -1060 195 25 50 120 70 160 25 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 150V, ID = 14A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 240V, ID = 14A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 14A VGS = 0V, IS = 14A dIF/dt =100A/s
(Note 4)
------
---235 1.6
14 56 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2.8mH, IAS = 14A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 14A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDB14N30 Rev. A
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FDB14N30 300V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics
10
2
ID, Drain Current [A]
10
1
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
1
150 C 25 C
o
o
10
0
-55 C
* Notes : 1. VDS = 40V 2. 250s Pulse Test
o
10
-1
* Notes : 1. 250s Pulse Test 2. TC = 25 C
-1
o
10
0
2
4
6
8
10
12
10
10
0
10
1
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
1.3
RDS(ON) [], Drain-Source On-Resistance
1.2
10
2
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 5 10 15 20 25 30
* Note : TJ = 25 C
o
VGS = 10V
IDR, Reverse Drain Current [A]
1.1
10
1
VGS = 20V
150oC 25 C
o
* Notes : 1. VGS = 0V 2. 250s Pulse Test
35
40
45
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
2000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
Coss
VGS, Gate-Source Voltage [V]
10
VDS = 60V VDS = 150V VDS = 240V
Capacitances [pF]
8
Ciss
1000
6
Crss
* Note : 1. VGS = 0 V 2. f = 1 MHz
4
2
* Note : ID = 14A
0 -1 10
10
0
10
1
0
0
2
4
6
8
10
12
14
16
18
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDB14N30 Rev. A
3
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FDB14N30 300V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 7 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
15
10
2
10 s 100 s
ID, Drain Current [A]
10
1
1 ms 10 ms 100 ms DC
ID, Drain Current [A]
o o
10
10
0
Operation in This Area is Limited by R DS(on)
5
10
-1
* Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
10
-2
10
0
10
1
10
2
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
PDM t1
10
0
t2
D = 0 .5 0 .2
ZJC(t), Thermal Response
PDM t1 t2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1
* N o te s :
10
-2
s in g le p u ls e
1 . Z J C ( t) = 0 .8 9 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
o
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FDB14N30 Rev. A
4
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FDB14N30 300V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB14N30 Rev. A
5
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FDB14N30 300V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDB14N30 Rev. A
6
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FDB14N30 300V N-Channel MOSFET
Mechanical Dimensions
D2-PAK
FDB14N30 Rev. A
7
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Rev. I24
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com

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